TGAN60N60F2DS IC TO-3PN 60A 600V IGBT TRinno Technology 60N60 TGAN60N60F2DS

Product Overview

The TGAN60N60F2DS is a high-performance 600V Field Stop Trench Insulated Gate Bipolar Transistor (IGBT) designed for efficient power switching. It is engineered for low switching losses across a wide temperature range and features a positive temperature coefficient, which facilitates easy parallel operation in high-power applications such as uninterruptible power supplies (UPS), welders, inverters, and solar power systems.

Core Specifications

• Manufacturer: Trinnotech

• Package Type: Not specified in provided text (Commonly TO-247 or similar for high-current IGBTs)

• Function: 600V Field Stop Trench IGBT

• Input Voltage: Collector-Emitter Breakdown Voltage (BVces) of 600V

• Control Interface: Gate-Emitter control; optimized for 15V gate drive applications with integrated gate resistance of 2.1 Ω.