TGAN60N60F2DS 60A 600V IGBT Transistor TRinno TO-3PN TGAN60N60F2DS

Product Overview

The TGAN60N60F2DS is a high-performance 600V Insulated Gate Bipolar Transistor (IGBT) manufactured by TRinno Technology. It is engineered with advanced Field Stop Trench technology, which provides a significant reduction in both conduction and switching losses. This device is specifically optimized for high-efficiency, hard-switching applications such as solar inverters, uninterruptible power supplies (UPS), induction heating, and industrial motor controls. It includes an integrated anti-parallel diode to handle reverse recovery, ensuring high reliability in demanding power conversion circuits.

Core Specifications

• Manufacturer: TRinno Technology

• Package Type: TO-3PN (High-power through-hole)

• Component Type: N-Channel Field Stop Trench IGBT

• Collector-Emitter Voltage ($V_{CES}$): 600V

• Continuous Collector Current ($I_C$): 60A (at $T_C = 100^\circ C$)

• Pulsed Collector Current ($I_{CM}$): 180A

• Gate-Emitter Voltage ($V_{GES}$): ±20V

• Saturation Voltage ($V_{CE(sat)}$): 1.8V (Typical @ $I_C = 60A$)

• Power Dissipation ($P_D$): 333W (at $T_C = 25^\circ C$)

• Marking Code: TGAN60N60F2DS

• Part Number: TGAN60N60F2DS