TGAN40N120FD 40A 1200V IGBT Transistor TRinno TO-3PN TGAN40N120FDR

Product Overview

The TGAN40N120FD is a robust 1200V Insulated Gate Bipolar Transistor (IGBT) from TRinno Technology, engineered using advanced Field Stop Trench technology. This device is designed to provide an excellent balance between low saturation voltage (minimizing conduction losses) and fast switching speeds, which reduces energy waste in high-frequency applications. It includes an integrated, high-speed, soft-recovery anti-parallel diode, making it highly effective for rugged, high-efficiency power conversion tasks. It is ideal for use in industrial motor drives, solar inverters, induction heating systems, and uninterruptible power supplies (UPS).

Core Specifications

• Manufacturer: TRinno Technology

• Package Type: TO-3PN (High-power through-hole)

• Component Type: N-Channel Field Stop Trench IGBT

• Collector-Emitter Voltage ($V_{CES}$): 1200V

• Continuous Collector Current ($I_C$): 40A (at $T_C = 100^\circ C$)

• Pulsed Collector Current ($I_{CM}$): 120A

• Gate-Emitter Voltage ($V_{GES}$): ±20V

• Saturation Voltage ($V_{CE(sat)}$): 1.9V (Typical @ $I_C = 40A$)

• Power Dissipation ($P_D$): 347W (at $T_C = 25^\circ C$)

• Marking Code: TGAN40N120FD

• Part Number: TGAN40N120FD