STP150N10F7 MOSFET N channel TO220 100V 110A ST STP150N10F7

Product Overview:

A through-hole N-Channel power MOSFET engineered for high-efficiency, high-current, and high-speed switching applications. Utilizing STMicroelectronics' advanced STripFET™ F7 technology with an enhanced trench gate structure, it achieves an exceptionally low on-state resistance ($R_{DS(on)}$) to significantly minimize conduction losses and maximize overall system power density. It features a low reverse transfer capacitance ($C_{rss}$) and reduced gate charge for rapid switching times, combined with high avalanche ruggedness and superior electromagnetic interference (EMI) immunity. This device is highly optimized for demanding environments such as high-efficiency DC-DC converters, motor control drives, industrial power supplies, switching regulators, and synchronous rectification systems.

Core Specifications:

Manufacturer: STMicroelectronics

Package Type: TO-220

Function: N-Channel Power MOSFET

Maximum Drain-Source Voltage: 100V

Continuous Drain Current: 110A (at 25°C, limited by the package)

Specific Variant: STP150N10F7