SGP02N120 TO-220 GP02N120 TO220 2N120 IGBT 1200V 2A Infineon SGP02N120

Product Overview: A through-hole Insulated-Gate Bipolar Transistor (IGBT) designed for high-voltage, fast-switching applications. Utilizing Non-Punch Through (NPT) technology, it offers low switching losses, a positive temperature coefficient for easy paralleling, and high ruggedness. It is well-suited for industrial applications requiring high reliability, such as motor drives, frequency converters, and switch-mode power supplies.

Core Specifications:

Manufacturer: Infineon Technologies

Package Type: TO-220

Function: N-Channel IGBT

Maximum Collector-Emitter Voltage: 1200V

Continuous Collector Current: 2A (at 100°C)

Specific Variant: SGP02N120