IRFZ48N Power MOSFET Infineon IRFZ48N

Product Overview:

A through-hole N-Channel HEXFET® Power MOSFET engineered for high-efficiency, high-speed switching, and low on-resistance. Utilizing advanced processing technology, it achieves an exceptionally low on-state resistance ($R_{DS(on)}$) to significantly minimize conduction losses and maximize overall system efficiency. It features an extended operating temperature rating (up to 175°C), fast switching speeds, and full avalanche ruggedness. This versatile component is widely utilized in power electronics applications such as DC-DC converters, motor control drivers, uninterruptible power supplies (UPS), automotive systems, and efficient low-voltage power switching controllers.

Core Specifications:

Manufacturer: Infineon (Formerly International Rectifier - IR)

Package Type: TO-220AB / TO-220

Function: N-Channel Power MOSFET

Maximum Drain-Source Voltage: 55V

Continuous Drain Current: 64A (at 25°C) / 45A (at 100°C)

Specific Variant: IRFZ48N / IRFZ48NPBF