IRFP3710 MOSFET TO-247 Infineon IRFP3710

Product Overview:

A through-hole N-Channel HEXFET® Power MOSFET engineered for high-power, high-speed switching applications. Utilizing advanced processing technology, this device achieves an extremely low on-state resistance ($R_{DS(on)}$) per silicon area, minimizing conduction losses and ensuring high power efficiency.

Packaged in a robust TO-247 enclosure, it features an isolated central mounting hole and excellent thermal dissipation capability, making it highly preferred for commercial-industrial systems where higher power levels preclude the use of standard TO-220 devices. It features a 175°C operating temperature rating, dynamic $dv/dt$ ruggedness, and full avalanche characterization to maintain stable and reliable operation under harsh electrical stresses. This component is widely utilized in heavy-duty environments, including switch-mode power supplies (SMPS), DC motor controls, power inverters, battery management systems, and synchronous rectification circuits.

Core Specifications:

• Manufacturer: Infineon (Formerly International Rectifier - IR)

• Package Type: TO-247AC / TO-247

• Function: N-Channel Power MOSFET

• Maximum Drain-Source Voltage: 100V

• Continuous Drain Current: 57A (at 25°C) / 40A (at 100°C)

• Specific Variant: IRFP3710 / IRFP3710PBF