IRFBE30 MOSFET N-CHANNEL 800V 4.1A VISHAY IRFBE30

Product Overview: A through-hole N-Channel power MOSFET designed for high-voltage, high-speed switching applications. Utilizing advanced planar technology, it combines high voltage breakdown capabilities with efficient switching performance and low gate charge. This makes it highly reliable and suitable for high-voltage applications such as off-line switch-mode power supplies (SMPS), electronic lamp ballasts, high-voltage DC-DC converters, and power factor correction (PFC) circuits.

Core Specifications:

Manufacturer: Vishay

Package Type: TO-220AB / TO-220

Function: N-Channel Power MOSFET

Maximum Drain-Source Voltage: 800V

Continuous Drain Current: 4.1A (at 25°C) / 2.6A (at 100°C)

Specific Variant: IRFBE30