IRFBC30 Power MOSFET VISHAY IRFBC30

Product Overview:

A through-hole N-Channel power MOSFET engineered for high-voltage, high-speed switching applications. Utilizing advanced planar technology, this device provides an optimal combination of fast switching capability, ruggedized device design, low on-resistance ($R_{DS(on)}$), and cost-effectiveness. It features high dynamic $dv/dt$ ruggedness and full avalanche characterization, ensuring reliable performance under harsh electrical conditions. This versatile component is widely utilized in high-voltage power management architectures, including switch-mode power supplies (SMPS), DC-to-DC converters, electronic lamp ballasts, active power factor correction (PFC), and motor driver systems.

Core Specifications:

• Manufacturer: Vishay Siliconix

• Package Type: TO-220AB / TO-220

• Function: N-Channel Power MOSFET

• Maximum Drain-Source Voltage: 600V

• Continuous Drain Current: 3.6A (at 25°C) / 2.3A (at 100°C)

• Specific Variant: IRFBC30 / IRFBC30PBF