IRFB4310 MOSFET N-Channel Infineon IRFB4310

Product Overview:

The IRFB4310 is a high-performance, through-hole N-Channel Power MOSFET designed by Infineon Technologies. It utilizes advanced HEXFET processing technology to deliver ultra-low on-resistance combined with improved gate, avalanche, and dynamic dV/dt ruggedness. This component is highly efficient and optimized for high-speed power switching, uninterruptible power supplies (UPS), and synchronous rectification in switch-mode power supplies (SMPS).

• Manufacturer: Infineon Technologies (International Rectifier)

• Package Type: TO-220 (TO-220AB)

• Function: N-Channel Power MOSFET

• Voltage Rating (Vds): 100V

• Current Rating (Id): 130A to 140A (Silicon Limited)

• Drain-Source On-Resistance (Rds(on)): 5.6 mOhms (typical) / 7.0 mOhms (maximum)

• Maximum Power Dissipation (Pd): 300W to 330W

• Part Number: IRFB4310 (IRFB4310PBF)