IRFB4115 MOSFET N -CHANNEL 150V 104A Infineon IRFB4115

Product Overview:

A through-hole N-Channel HEXFET® Power MOSFET engineered for high-efficiency, high-current, and high-speed switching applications. Utilizing advanced processing techniques, it achieves an exceptionally low on-state resistance ($R_{DS(on)}$) to minimize conduction losses and maximize power density. It features improved gate, avalanche, and dynamic $dv/dt$ ruggedness along with an enhanced body diode capability. This makes it highly optimized for demanding high-power environments such as high-efficiency synchronous rectification in switch-mode power supplies (SMPS), uninterruptible power supplies (UPS), motor drives, battery management systems (BMS), and high-speed power switching circuits.

Core Specifications:

Manufacturer: Infineon (Formerly International Rectifier - IR)

Package Type: TO-220AB / TO-220

Function: N-Channel Power MOSFET

Maximum Drain-Source Voltage: 150V

Continuous Drain Current: 104A (at 25°C, Silicon limited) / 74A (at 100°C)

Specific Variant: IRFB4115 / IRFB4115PBF