IRFB260 MOSFET N-CHANNEL 200V 56A Infineon IRFB260

Product Overview:

A through-hole N-Channel HEXFET® Power MOSFET engineered for high-voltage, high-speed switching applications. Utilizing advanced planar technology, it achieves a very low on-state resistance ($R_{DS(on)}$) per silicon area, ensuring high efficiency and low power dissipation. This device is highly rugged and suitable for demanding applications such as switch-mode power supplies (SMPS), DC-DC converters, uninterruptible power supplies (UPS), and high-power motor control systems.

Core Specifications:

Manufacturer: Infineon (Formerly International Rectifier - IR)

Package Type: TO-220AB / TO-220

Function: N-Channel Power MOSFET

Maximum Drain-Source Voltage: 200V

Continuous Drain Current: 56A (at 25°C) / 40A (at 100°C)

Specific Variant: IRFB260 / IRFB260PBF