IRF9Z24N MOSFET P Channel 55V 12A Infineon IRF9Z24N

Product Overview: A through-hole P-Channel HEXFET® Power MOSFET engineered for efficient, high-speed switching and low on-resistance. Utilizing advanced planar technology, this device provides excellent thermal performance and high avalanche ruggedness. As a P-channel device, it simplifies circuit design by eliminating the need for an isolated gate supply when used as a high-side switch, making it widely popular in motor drives, power management systems, and audio amplifiers.

Core Specifications:

Manufacturer: Infineon (Formerly International Rectifier - IR)

Package Type: TO-220AB / TO-220

Function: P-Channel Power MOSFET

Maximum Drain-Source Voltage: -55V

Continuous Drain Current: -12A (at 25°C) / -8.5A (at 100°C)

Specific Variant: IRF9Z24N / IRF9Z24NPBF