IRF9530NPBF MOSFET TO220 P Channel 100V 14A Infineon IRF9530NPBF

Product Overview:

A through-hole P-Channel HEXFET® Power MOSFET engineered for high-speed switching and power management applications. Utilizing advanced processing technology, this device achieves low on-state resistance ($R_{DS(on)}$) per silicon area, ensuring high efficiency and low power dissipation. As a P-channel device, it simplifies circuit design by eliminating the need for an isolated gate supply when used as a high-side switch. It features high dynamic $dv/dt$ ruggedness, fast switching speeds, and full avalanche characterization, providing highly reliable operation under varied electrical stresses. This component is widely used in power management environments, including switching regulators, DC-to-DC converters, motor control drivers, and high-fidelity audio amplifiers.

Core Specifications:

• Manufacturer: Infineon (Formerly International Rectifier - IR)

• Package Type: TO-220AB / TO-220

• Function: P-Channel Power MOSFET

• Maximum Drain-Source Voltage: -100V

• Continuous Drain Current: -14A (at 25°C) / -10A (at 100°C)

• Specific Variant: IRF9530NPBF