IRF640 MOSFET N-Channel TO220 200v 18A GOODWORK IRF640

Product Overview:

A through-hole N-Channel power MOSFET engineered for high-voltage, high-speed switching applications. Utilizing advanced design technology, it provides an optimal combination of fast switching capability, ruggedized device design, and low on-resistance ($R_{DS(on)}$). It features high dynamic $dv/dt$ ruggedness and full avalanche characterization, ensuring reliable performance under harsh electrical conditions. This versatile component is widely used in power management environments such as switch-mode power supplies (SMPS), DC-to-DC converters, motor control drivers, uninterruptible power supplies (UPS), and general-purpose high-power switching systems.

Core Specifications:

Manufacturer: GOODWORK (Goodwork Semiconductor)

Package Type: TO-220

Function: N-Channel Power MOSFET

Maximum Drain-Source Voltage: 200V

Continuous Drain Current: 18A (at 25°C)

Specific Variant: IRF640