IRF620 MOSFET N CHANNEL TO220 R 200V 5.2A Infineon IRF620

Product Overview:

A through-hole N-Channel HEXFET® Power MOSFET engineered for high-voltage, high-speed switching applications. Utilizing advanced processing technology, it provides an optimal combination of fast switching capability, ruggedized device design, and low on-resistance ($R_{DS(on)}$). It features high dynamic $dv/dt$ ruggedness and full avalanche characterization, ensuring reliable performance under harsh electrical conditions. This versatile component is widely used in power management environments such as switch-mode power supplies (SMPS), DC-to-DC converters, motor control drivers, and general-purpose power switching systems.

Core Specifications:

Manufacturer: Infineon (Formerly International Rectifier - IR)

Package Type: TO-220AB / TO-220

Function: N-Channel Power MOSFET

Maximum Drain-Source Voltage: 200V

Continuous Drain Current: 5.2A (at 25°C) / 3.3A (at 100°C)

Specific Variant: IRF620 / IRF620PBF