IRF3710 MOSFET N-CHANNEL 100V 57A Infineon IRF3710

Product Overview:

A through-hole N-Channel HEXFET® Power MOSFET designed for high-efficiency, high-speed switching applications. Utilizing advanced processing techniques, it achieves an exceptionally low on-state resistance ($R_{DS(on)}$) per silicon area, minimizing conduction losses and maximizing power density. It features high operating temperatures, fast switching speeds, and full avalanche ruggedness, making it highly suitable for demanding applications such as uninterruptible power supplies (UPS), high-efficiency DC-DC converters, motor controls, and synchronous rectification systems.

Core Specifications:

Manufacturer: Infineon (Formerly International Rectifier - IR)

Package Type: TO-220AB / TO-220

Function: N-Channel Power MOSFET

Maximum Drain-Source Voltage: 100V

Continuous Drain Current: 57A (at 25°C) / 40A (at 100°C)

Specific Variant: IRF3710 / IRF3710PBF