IRF2807 Power MOSFET Infineon IRF2807

Product Overview:

The IRF2807 is a high-performance, through-hole N-Channel Power MOSFET designed by Infineon Technologies. Utilizing advanced HEXFET power MOSFET technology, it achieves ultra-low on-resistance per silicon area alongside fast switching speeds and a highly ruggedized architecture. This component is highly efficient and reliable for heavy-duty commercial and industrial applications such as motor control drives, high-power DC-DC converters, inverters, and synchronous rectification systems.

• Manufacturer: Infineon Technologies (International Rectifier)

• Package Type: TO-220 (TO-220AB)

• Function: N-Channel Power MOSFET

• Voltage Rating (Vds): 75V

• Current Rating (Id): 82A (Silicon limited) / 75A (Package limited)

• Drain-Source On-Resistance (Rds(on)): 13 mOhms (0.013 Ω) maximum at $V_{GS}=10V$

• Maximum Power Dissipation (Pd): 230W

• Operating Temperature Range: -55°C to +175°C

• Part Number: IRF2807