CTC1351 IC NPN Transistor CTC1351

Product Overview

The KTD1351 is a triple diffused NPN transistor designed for general-purpose applications. It is the complementary transistor to the KTB988.

Important Features

• Low Saturation Voltage: It features a maximum collector-emitter saturation voltage (VCEsat) of 1.0 V at a collector current (IC) of 2 A and a base current (IB) of 0.2 A.

• High Current Capacity: The device supports a continuous collector current (IC) of up to 3 A.

• Voltage Ratings: The collector-base voltage (VCBO) and collector-emitter voltage (VCEO) are both rated at 60 V.

• Power Handling: Collector power dissipation is rated at 2.0 W at an ambient temperature of 25 degrees Celsius (Ta) and 30 W at a case temperature of 25 degrees Celsius (Tc).

• Current Gain (hFE): The transistor is classified into three groups based on DC current gain: O (60–120), Y (100–200), and GR (150–300).