80N60 IGBT 600V 80A <0.75 80 N 60 IGBT 600V onsemi 80N60

Product Overview

A high-performance Insulated Gate Bipolar Transistor (IGBT) utilizing advanced Field Stop and Trench technology. It offers optimum performance for demanding high-power applications by combining exceptionally low conduction losses with fast switching speeds. Housed in a heavy-duty TO-247 package for superior thermal dissipation, this device is engineered for high-efficiency systems such as solar inverters, Uninterruptible Power Supplies (UPS), induction heating, welding machines, and Power Factor Correction (PFC) circuits.

Core Specifications

• Manufacturer: onsemi (formerly Fairchild Semiconductor)

• Package Type: TO-247 (Through-Hole)

• Component Type: N-Channel Field Stop IGBT

• Collector-Emitter Voltage ($V_{CES}$): 600V

• Continuous Collector Current ($I_C$): 80A (at $T_C = 100^\circ C$)

• Pulsed Collector Current ($I_{CM}$): 240A

• Gate-Emitter Voltage ($V_{GES}$): ±20V

• Saturation Voltage ($V_{CE(sat)}$): ~1.8V (Typical at $I_C = 80A$)

• Power Dissipation ($P_D$): 289W (at $T_C = 25^\circ C$)

• Marking Code: 80N60 / FGH80N60

• Part Number Base: FGH80N60 (e.g., FGH80N60FD)