40n60 Transistor TO-3P 40A 600V Power IGBT Transistor TRinno Technology TGAN40N60FDS

Product Overview:

A through-hole Field Stop (FS) Insulated Gate Bipolar Transistor (IGBT) housed in a heavy-duty TO-3P plastic package. Utilizing advanced trench gate field-stop technology, it delivers low switching and conduction losses alongside a highly robust short-circuit ride-through capability. It features an integrated fast-recovery co-packaged diode (FDS) and is specifically designed for high-efficiency, high-power applications such as solar inverters, Uninterruptible Power Supplies (UPS), welding machines, and power factor correction (PFC) circuits.

Core Specifications:

• Manufacturer: TRinno Technology

• Package Type: TO-3P

• Function: Field Stop IGBT (with Co-packaged Diode)

• Maximum Collector-Emitter Voltage ($V_{CES}$): 600V

• Maximum Continuous Collector Current ($I_C$): 40A (at $T_C = 100^\circ\text{C}$) / 80A (at $T_C = 25^\circ\text{C}$)

• Typical Saturation Voltage ($V_{CE(sat)}$): 1.9V (at $I_C = 40\text{A}$)

• Common Marking Code: 40N60 / TGAN40N60FDS