25N120 Transistor 25N120 KEC TO-247 25A 1200V IGBT Transistor KEC 25N120

Product Overview:

A through-hole Insulated Gate Bipolar Transistor (IGBT) housed in a robust TO-247 plastic package. Designed for high-voltage and high-current switching applications, it combines the simple gate-drive characteristics of a MOSFET with the high-current and low-saturation-voltage capability of a bipolar transistor. It is widely utilized in demanding applications such as induction heating, microwave ovens, heavy-duty motor drives, and high-power inverters.

Core Specifications:

• Manufacturer: KEC (Korea Electronics Co.)

• Package Type: TO-247

• Function: IGBT (Insulated Gate Bipolar Transistor)

• Maximum Collector-Emitter Voltage ($V_{CE}$): 1200V

• Maximum Continuous Collector Current ($I_C$): 25A