21N60 IC 600V 31A IGBT 21N60

Product Overview

The 21N60 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding power electronics applications. It combines high-speed switching capabilities with robust thermal management, making it an ideal choice for motor control, inverters, and high-reliability power supply systems.

Important Features

• High Efficiency: Features a low on-voltage (typically 2.15V at 20A), which minimizes power loss during operation.

• Thermal Robustness: Designed to operate in harsh environments with a wide junction temperature range of -55°C to 150°C.

• Circuit Protection: Includes built-in ESD protection via gate-emitter Zener diodes and offers short-circuit withstand capability (10 microseconds at 400V).

• High-Speed Switching: Optimized for rapid switching (Eoff = 65 microjoules per Ampere), reducing energy dissipation in high-frequency applications.

• Standard Packaging: Comes in an industry-standard TO-247 package, allowing for easy mounting and effective heat sinking.