15N120 IGBT 1200V 30A IGBT 15N 120 IGBT KEC 15N120

Product Overview

The 15N120 is a high-voltage Insulated Gate Bipolar Transistor (IGBT) designed for heavy-duty power conversion and high-efficiency switching. It utilizes advanced Trench/Field-Stop technology to achieve a balance between low conduction losses and fast switching speeds. Housed in a durable package, this device is engineered to withstand high voltage stress, making it an ideal choice for power-intensive applications including industrial motor drives, solar inverters, induction heating systems, and Uninterruptible Power Supplies (UPS).

Core Specifications

• Manufacturer: KEC (Korea Electronics Co., Ltd.)

• Package Type: TO-247 or TO-3P (Through-Hole)

• Component Type: N-Channel Trench IGBT

• Collector-Emitter Voltage ($V_{CES}$): 1200V

• Continuous Collector Current ($I_C$): 30A (at $T_C = 100^\circ C$)

• Peak Collector Current ($I_{CM}$): 60A

• Gate-Emitter Voltage ($V_{GES}$): ±20V

• Saturation Voltage ($V_{CE(sat)}$): ~1.8V to 2.2V (Typical)

• Power Dissipation ($P_{tot}$): ~200W (at $T_C = 25^\circ C$)

• Marking Code: 15N120

• Part Number: KIG15N120 (or equivalent series)