10N80L-TF1-T MOSFET UTC 800V UTC 10N80L-TF1-T

Product Overview:

A through-hole N-Channel power MOSFET engineered for high-voltage, high-efficiency, and high-speed switching applications. Utilizing UTC's advanced proprietary planar stripe DMOS technology, this device achieves an optimized on-state resistance ($R_{DS(on)}$) and ultra-low gate charge ($Q_g$) to minimize both conduction and switching power losses.

Packaged in an isolated TO-220F1 (Full-Pack) enclosure, it eliminates the requirement for external insulation hardware when mounting to a standard heatsink, saving assembly time and board space. It features improved $dv/dt$ capability, fast switching execution, and robust avalanche ruggedness, ensuring highly reliable operation under demanding electrical stresses. This component is widely utilized in high-voltage power management architectures such as switch-mode power supplies (SMPS), LED lighting drivers, inverter/converter networks, active power factor correction (PFC), and general-purpose pulse-width modulation (PWM) switching systems.

Core Specifications:

• Manufacturer: UTC (Unisonic Technologies Co., Ltd.)

• Package Type: TO-220F1 / TO-220F (Isolated Full-Pack)

• Function: N-Channel Power MOSFET

• Maximum Drain-Source Voltage: 800V

• Continuous Drain Current: 10A (at 25°C)

• Specific Variant: 10N80L-TF1-T ("L" denotes Lead-Free / RoHS compliant)